GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages