型号 功能描述 生产厂家 企业 LOGO 操作
RF1S45N06SM

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Fairchild

仙童半导体

RF1S45N06SM

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Intersil

RF1S45N06SM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S45N06SM

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

RF1S45N06SM

45A, 60V, 0.028 Ohm, N-Channel Power

文件:381.64 Kbytes Page:8 Pages

Fairchild

仙童半导体

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

Intersil

RF1S45N06SM产品属性

  • 类型

    描述

  • 型号

    RF1S45N06SM

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2025-12-23 12:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
H
23+24
SOT263
17280
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
FSC
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
FAIRCHILD
25+
50
公司优势库存 热卖中!
HARRISCORPORATION
21+
NA
12820
只做原装,质量保证
HARRISCORPORATION
22+
N/A
12245
现货,原厂原装假一罚十!
-
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择
INTERSIL
1415+
TO-263
28500
全新原装正品,优势热卖
FAIRCHILD/仙童
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
SOT-263
7498
一级代理 原装正品假一罚十价格优势长期供货

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