位置：首页 > IC中文资料第4167页 > RF1S45N06SM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF1S45N06SM | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | Fairchild 仙童半导体 |   | |
RF1S45N06SM | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | Intersil | | |
RF1S45N06SM | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
RF1S45N06SM | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
RF1S45N06SM | 45A, 60V, 0.028 Ohm, N-Channel Power 文件：381.64 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | |
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | Fairchild 仙童半导体 | | ||
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app | Intersil | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |
RF1S45N06SM产品属性
- 类型
描述
- 型号
RF1S45N06SM
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SOT-263 |
7498 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
INTERSIL |
23+ |
65480 |
|||||
HARRISCORPORATION |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
NEW |
TO-263 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
HAR |
23+ |
RF1S50N06LE |
13528 |
振宏微原装正品,假一罚百 |
|||
HARRISCORPORATION |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
HARRISCORPORATION |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
FAIRCHILD |
25+ |
50 |
公司优势库存 热卖中! |
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RF1S45N06SM规格书下载地址
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DdatasheetPDF页码索引
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