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型号 功能描述 生产厂家 企业 LOGO 操作
RF1S45N06

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

FAIRCHILD

仙童半导体

RF1S45N06

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

INTERSIL

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

INTERSIL

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

RENESAS

瑞萨

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

45A, 60V, 0.028 Ohm, N-Channel Power

文件:381.64 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

RF1S45N06产品属性

  • 类型

    描述

  • 型号

    RF1S45N06

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2026-5-13 19:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARRIS
06+
TO-263
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HAR
23+
RF1S45N06LES
13528
振宏微原装正品,假一罚百
FAIRCHILD
25+
50
公司优势库存 热卖中!
INTERSIL/FSC
26+
TO-263
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
SOT-263
7498
一级代理 原装正品假一罚十价格优势长期供货
EMP
23+
SOT-23-5
69820
终端可以免费供样,支持BOM配单!
-
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
3510
FSC
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
H
23+24
SOT263
17280
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC

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