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RF112

RF112 Transceiver Data Sheet

ETC

知名厂家

RF112

RF编码无线芯片

AYXSJ

丝印代码:RF112YMM;The MICRF112 is a high-performance, easy-to-use, true “Data-In, RF-Out”, ASK/FSK, Phase-Locked Loop (PLL)- based, transmitter IC for applications in the 300 MHz to 450 MHz frequency range.

Features • 1.8V to 3.6V Supply Voltage Range • Up to +10 dBm Output Power (CW) • 6.9 mA Supply Current at 1 kbps ASK (50% Manchester) • 11.5 mA Supply Current at +10 dBm (FSK/CW) • 1 μA Shutdown Supply Current • Data Rates Up to 50 kbps ASK, 10 kbps FSK • Crystal or Ceramic Resonators S

MICROCHIP

微芯科技

600 - 3500 MHz Broadband Medium Power, High Isolation SPDT Switch

Qorvo's RF1128 is a single-pole double-throw (SPDT) switch designed for general purpose switching applications which require very low insertion loss and high power handling capability. The RF1128 is ideally suited for battery operated applications requiring high performance switching with very low D ·Broadband Performance: Low Frequency to 3.5GHz\n·Very Low Insertion Loss:\n·- 0.35dB at 1GHz\n·- 0.40dB at 2GHz\n·Excellent Linearity:\n·- IIP2 > 108dBm (Typ.)\n·- IIP3 > 67dBm (Typ.)\n·P0.1dB>29dBm (Typ.)\n·Compact Footprint\n·(2.0mm x 1.3mm x 0.35mm, 6-pin QFN);

QORVO

威讯联合

RF112L0H Transceiver Data Sheet

ETC

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RF112 Transceiver Data Sheet

ETC

知名厂家

RF112 Transceiver Data Sheet

ETC

知名厂家

BROADBAND MEDIUM POWER SPDT SWITCH

文件:410.2 Kbytes Page:7 Pages

RFMD

威讯联合

BROADBAND LOW POWER SPDT SWITCH

QORVO

威讯联合

BROADBAND LOW POWER SPDT SWITCH

文件:555.63 Kbytes Page:8 Pages

RFMD

威讯联合

BROADBAND MEDIUM POWER

文件:383.16 Kbytes Page:6 Pages

RFMD

威讯联合

JFET Chopper Transistor (N-Channel- Depletion)

JFET Chopper Transistor N–Channel — Depletion

MOTOROLA

摩托罗拉

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

MOTOROLA

摩托罗拉

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA

摩托罗拉

POWER TRANSISTORS(2.0A,60-100V,50W)

MOSPEC

统懋

Operational Amplifiers

文件:200.55 Kbytes Page:6 Pages

NSC

国半

RF112产品属性

  • 类型

    描述

  • 频率最小值(MHz):

    100

  • 频率最大值(MHz):

    6

  • 插入损耗(dB):

    0.26

  • 隔离(dB):

    27

  • IIP3(dBm):

    62

  • 电压(V):

    3

  • 封装类型:

    QFN

  • 封装(mm):

    2.0 x 1.3

更新时间:2026-5-13 22:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RFMD
26+
9880
只做原装,欢迎来电资询
RFMD
24+
QFN
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NA
15+
SMD
1785
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RFMD
25+
原装
32000
RFMD全新特价RF1128TR7即刻询购立享优惠#长期有货
RFMD
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
QORVO
19+
标准封装
2591
RFMD
25+
QFN
15000
全新原装现货,价格优势
RFMD
24+
QFN6
5500
RFMD专营原装现货优势热卖
RFMD
QFN
3688
一级代理 原装正品假一罚十价格优势长期供货
RFMD
22+
QFN
3000
原装正品,支持实单

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