isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -6A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.66Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

丝印代码：D6P10；P-Channel Enhancement Mode Power MOSFET

文件：729.56 Kbytes Page：5 Pages

丝印代码：D6P10；P-Channel Enhancement Mode Power MOSFET

文件：986.23 Kbytes Page：5 Pages

P?묬hannel DPAK Power MOSFET

文件：212.11 Kbytes Page：7 Pages