iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrentID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100AvalancheTested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Highcurrent,highspeedsw

Nch100V35APowerMOSFET

Features 1)Lowon-resistance 2)HighPowerPackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)Halogenfree Application Switching

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐30V RDSON(MAX.)125mΩ ID‐3.1A Pb‐FreeLeadPlating&HalogenFree

DUALTMOSPOWERMOSFET30VOLTS

MediumPowerSurfaceMountProducts TMOSDualP-ChannelFieldEffectTransistors DualHDTMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.DualHDTMOSdevicesaredesignedforuseinlowvoltage,highspeedswitchingapplicationswherep

DUALBIPOLARPOWERTRANSISTORPNPSILICON30VOLTS3AMPERES

PlasticPowerTransistors SO–8forSurfaceMountApplications •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =140(Min)@IC=1.2Adc =125(Min)@IC=3.0Adc •LowCollector–EmitterSaturationVoltage—VCE(sat)

PlasticPowerTransistors

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P?묬hannelPowerMOSFET

文件：273.23 Kbytes Page：12 Pages