isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed sw

Nch 100V 35A Power MOSFET

Features 1) Low on - resistance 2) High Power Package(TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free Application Switching

Nch 100V 35A, TO-252, Power MOSFET

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 125mΩ ID ‐3.1A Pb‐Free Lead Plating & Halogen Free

DUAL TMOS POWER MOSFET 30 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where p

DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

Plastic Power Transistors SO–8 for Surface Mount Applications • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat)

Plastic Power Transistors

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P?묬hannel Power MOSFET

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