型号 功能描述 生产厂家 企业 LOGO 操作

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

INTEL

英特尔

封装/外壳:64-TBGA 包装:管件 描述:IC FLASH 16MBIT PAR 64EASYBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 16M PARALLEL 64EASYBGA

MICRON

美光

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

FLASH MEMORY

GENERAL DESCRIPTION The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O

MICRON

美光

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

INTEL

英特尔

16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

????????????旺宏电子

16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

????????????旺宏电子

RC28F160C3B产品属性

  • 类型

    描述

  • 型号

    RC28F160C3B

  • 功能描述

    IC FLASH 16MBIT 110NS 64BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    150

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    4K(2 x 256 x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    2.5 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-VFDFN 裸露焊盘

  • 供应商设备封装

    8-DFN(2x3)

  • 包装

    管件

  • 产品目录页面

    1445(CN2011-ZH PDF)

更新时间:2026-3-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL(英特尔)
24+
标准封装
12048
原厂渠道供应,大量现货,原型号开票。
Micron Technology Inc.
25+
32-TSOP
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
SONY
23+
CCD镜片
12000
全新原装假一赔十
INTEL
24+
BGA64
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTEL
存储器
BGA
41423
INTEL存储芯片RC28F160C3BD70即刻询购立享优惠#长期有货
INTEI
02+
BGA
390
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Micron Technology Inc.
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
INTEL
23+
BGA
8560
受权代理!全新原装现货特价热卖!
INTEL
25+
BGA
30000
代理原装现货,价格优势
INTEL
25+
BGA
14960
百分百原装正品 真实公司现货库存 本公司只做原装 可

RC28F160C3B数据表相关新闻