型号 功能描述 生产厂家&企业 LOGO 操作
RC28F160C3

3VOLTADVANCEDBOOTBLOCK8-,16-,32-MBITFLASHMEMORYFAMILY

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

封装/外壳:64-TBGA 包装:管件 描述:IC FLASH 16MBIT PAR 64EASYBGA 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

封装/外壳:64-TBGA 包装:管件 描述:IC FLASH 16MBIT PAR 64EASYBGA 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

AdvancedBootBlockFlashMemory(C3)

The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible

IntelIntel Corporation

英特尔

Intel

3VoltIntelAdvancedBootBlockFlashMemory

DeviceDescription ThissectionprovidesanoverviewoftheIntel®Advanced+BootBlockFlashMemory(C3)devicefeatures,packaging,signalnaming,anddevicearchitecture. ProductOverview TheC3deviceprovideshigh-performanceasynchronousreadsinpackage-compatibledensitieswitha16bit

IntelIntel Corporation

英特尔

Intel

FLASHMEMORY

GENERALDESCRIPTION TheMT28F160C3isanonvolatile,electricallyblockerasable(flash),programmable,read-onlymemorycontaining16,777,216bitsorganizedas1,048,576words(16bits). TheMT28F160C3ismanufacturedon0.22µmprocesstechnologyina48-ballFBGApackage.ThedevicehasanI/O

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

16M-BIT[1Mx16]CMOSSINGLEVOLTAGE3VONLYFLASHMEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

16M-BIT[1Mx16]CMOSSINGLEVOLTAGE3VONLYFLASHMEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

RC28F160C3产品属性

  • 类型

    描述

  • 型号

    RC28F160C3

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

更新时间:2025-7-4 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL
17+
BGA
6200
100%原装正品现货
INTEL
23+
BGA
927
原装正品现货
INTEL
2020+
BGA
14960
百分百原装正品 真实公司现货库存 本公司只做原装 可
INTEL/英特尔
23+
BGA
98900
原厂原装正品现货!!
INTEL/英特尔
24+
BGA64
45310
只做全新原装进口现货
INTEL/英特尔
23+
BGA
89630
当天发货全新原装现货
INTEL
18+
BGA
26734
全新原装现货,可出样品,可开增值税发票
Micron Technology Inc.
21+
256-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
INTEL/英特尔
25+
BGA
13800
原装,请咨询
INTEL(英特尔)
24+
标准封装
12048
原厂渠道供应,大量现货,原型号开票。

RC28F160C3芯片相关品牌

  • AMPHENOLCS
  • Central
  • GENESIC
  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • PTC
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

RC28F160C3数据表相关新闻