2.0A WOM BRIDGE RECTIFIERS

2.0A WOM BRIDGE RECTIFIERS

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE：50-1000V CURRENT：2.0A FEATURES · Surge overload ratings-50 Amperes · Good for printed circuit board assembly

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES * Surge overload ratings to 50 Amperes peak * Ideal for printed circuit board assembly

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT1.5 Amperes FEATURES Low cost This series is UL recognized under component index,file number E127707 High forward surge current capability Ideal for printed circuit board High temperature soldering guaranteed: 260℃/10 second, 0.375”(9.5m

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES Low cost This series is UL recognized under component index,file number E127707 High forward surge current capability Ideal for printed circuit board High temperature soldering guaranteed: 260℃/10 second, 0.375”(9.5

SILICON BRIDGE RECTIFIERS Reverse Voltage - 50 to 1000 Vo lts Forward Current - 2.0 Amperes

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Ideal for printed circuit boards ♦ Low reverse leakage ♦ High forward surge current capability ♦ High tempera

2.0A BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

Bridge Rectifiers

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes)

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SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

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SILICON BRIDGE RECTIFIERS

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.