1.5A RB SERIES SIP BRIDGE RECTIFIERS

1.5A RB SERIES SIP BRIDGE RECTIFIERS

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE: 50 - 800V CURRENT: 1.5 A Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

SILICON BRIDGE RECTIFIERS

PRV : 50 - 800 Volts Io : 1.5 Amperes FEATURES : * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Pb / RoHS Free

1.5A BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards ● Recongnized File #E157705

1.5A SINGLE PHASE BRIDGE RECTIFIER

Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Recognized File # E157705

PRV : 50 - 800 Volts Io : 1.5 Amperes

FEATURES : * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant

1.5A 800V Rectifying bridge

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标準桥式整流器

1.5A SINGLE-PHASE BRIDGE RECTIFIER

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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1.5A RB SERIES SIP BRIDGE RECTIFIERS

1.5A RB SERIES SIP BRIDGE RECTIFIERS

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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