SILICON BRIDGE RECTIFIERS

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A FEATURES ◇ Rating to 1000V PRV ◇ Surge overload rating to 50 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Mounting Position: Any ◇ Glass pas

Bridge Rectifier

1.5A Glass Passivated Single-Phase Bridge Rectifiers-50-1000V Features • Surge overload rating 50 amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique results in expensive product • Lead-free parts for green partner, meet RoHS

MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

1.5A Glass Passivated Bridge Rectifier

Features • Glass passivated chip junction • High case dielectric strength • Typical IR less than 0.1µA • High surge current capability • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds 0.375” (9.5mm) lead length at 5lbs.(2.3kg) tension • RoHS c

Bridge Rectifier

1.5A Glass Passivated Single-Phase\nBridge Rectifiers-50-1000V • Surge overload rating 50 amperes peak\n• Ideal for printed circuit board\n• Reliable low cost construction utilizing molded plastic\n   technique results in expensive product\n• Lead-free parts for green partner, meet RoHS requirements\n• Suffix \"-H\" indicates Halogen-free parts, ex. RΒ151G-H.;

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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