R系列

R系列真空三相交流接触器用于接通与分断电路，尤其适用于控制三相交流电动机的频繁起动和停止，可与各种保护装置组成磁力起动器。\n\n • 交直流通用\n• 分断大电流负载\n;

丝印代码：R8003KND3；Nch 800V 3A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

丝印代码：R8001CND3；Nch 800V 1A Power MOSFET

文件：2.44241 Mbytes Page：14 Pages

丝印代码：R8002ANJ；Nch 800V 2A Power MOSFET

文件：1.55162 Mbytes Page：14 Pages

丝印代码：R8002CND3；Nch 800V 2A Power MOSFET

文件：1.33921 Mbytes Page：14 Pages

丝印代码：R8002KND3；Nch 800V 1.6A Power MOSFET

文件：2.24323 Mbytes Page：14 Pages

丝印代码：R8002KNX；Nch 800V 1.6A Power MOSFET

文件：2.35862 Mbytes Page：14 Pages

丝印代码：R8003KNX；Nch 800V 3A Power MOSFET

文件：2.27603 Mbytes Page：14 Pages

丝印代码：R8005ANJ；Nch 800V 5A Power MOSFET

文件：1.59056 Mbytes Page：14 Pages

丝印代码：R8006KNX；Nch 800V 6A Power MOSFET

文件：2.32084 Mbytes Page：14 Pages

丝印代码：R8007A；Nch 800V 7A Power MOSFET

文件：2.48581 Mbytes Page：14 Pages

丝印代码：R8008ANJ；Nch 800V 8A Power MOSFET

文件：1.60635 Mbytes Page：14 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.7Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Nch 800V 1A 功率MOSFET

为支持现有客户而生产的产品。不对新设计出售此产品。 • Low on-resistance.\n• Fast switching speed.\n• Drive circuits can be simple.\n• Parallel use is easy.\n• Pb-free plating ; RoHS compliant;

Nch 800V 1A 功率MOSFET

R8001CND3FRA是适合开关电源用途的Super Junction MOSFET产品。 本产品是符合AEC-Q101标准的车载级MOSFET。 • Low on-resistance\n• Fast switching speed\n• Drive circuits can be simple\n• Pb-free plating ; RoHS compliant\n• AEC-Q101 qualified;

10V Drive Nch MOSFET

Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Application Switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 8A@ TC=25℃ • Drain Source Voltage- : VDSS=800V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.03Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

DISTRIBUTED GATE THYRISTORS

[Westcode] Distributed Gate Thyristors ~ All types

丝印代码：RG；Fast Recovery High Voltage Diodes

文件：134.86 Kbytes Page：4 Pages

丝印代码：TL；Nch 800V 1A Power MOSFET

文件：2.92619 Mbytes Page：14 Pages

Nch 800V 2A Power MOSFET

文件：986.15 Kbytes Page：14 Pages

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：298.97 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

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Power MOSFET

文件：1.29114 Mbytes Page：9 Pages

丝印代码：TL；Nch 800V 1A Power MOSFET

文件：2.58909 Mbytes Page：14 Pages

Nch 800V 5A Power MOSFET

文件：995.06 Kbytes Page：14 Pages

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：298.64 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

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Nch 800V 5A Power MOSFET

文件：901.52 Kbytes Page：15 Pages

Power MOSFET

文件：1.29121 Mbytes Page：9 Pages

Nch 800V 8A Power MOSFET

文件：951.08 Kbytes Page：14 Pages

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：299.32 Kbytes Page：2 Pages

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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