位置：首页 > IC中文资料第3800页 > QJD1210006
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
QJD1210006 | Silicon Carbide MOSFET Module 100 Amperes/1200 Volts Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky dio | POWEREX |   | |
QJD1210006 | Silicon Carbide MOSFET Module 100 Amperes/1200 Volts | POWEREX | | |
NS 35/15 PERF (18X5,2) 2000MM-VPE 10 - DIN rai perforated DIN rail perforated, Pack of 10 (20 m), similar to EN 60715, material: Steel, galvanized, passivated with a thick layer, Standard profile, color: silver | PHOENIXPHOENIX CONTACT 菲尼克斯德国菲尼克斯电气集团 | | ||
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts 文件：798.4 Kbytes Page：7 Pages | POWEREX | | ||
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts 文件：905.84 Kbytes Page：7 Pages | POWEREX | | ||
Omnidirectional input device realizing a smooth operating feel 文件：785.41 Kbytes Page：2 Pages | ALPS 阿尔卑斯 | |
QJD1210006产品属性
- 类型
描述
- 型号
QJD1210006
- 制造商
Powerex Power Semiconductors
- 功能描述
SILICON CARBIDE TRANSISTOR
- 制造商
Powerex Power Semiconductors
- 功能描述
SILICON CARBIDE POWER TRANSISTORS/MODULES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英特尔 |
BGA |
19 |
原装正品仓库现货 可看货支持实单! |
||||
INTEL/英特尔 |
2402+ |
FCBGA |
8324 |
原装正品!实单价优! |
|||
Powerex Inc. |
22+ |
Module |
9000 |
原厂渠道,现货配单 |
|||
INTEL |
26+ |
SOT-523 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
INTEL |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Powerex Inc. |
25+ |
模块 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INTEL/英特尔 |
23+ |
BGA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
INTEL |
08+ |
BGA |
8 |
||||
INTEL/英特尔 |
BGA |
1000 |
只做原装,库存和价格请咨询为准 |
||||
INTEL |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
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QJD1210006规格书下载地址
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QJD1210006数据表相关新闻
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2019-3-3
DdatasheetPDF页码索引
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