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QJD1210006中文资料
QJD1210006数据手册规格书PDF详情
Description:
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
□ Junction Temperature - 200°C
□ Silicon Carbide Chips
□ Industry Leading RDS(on)
□ High Speed Switching
□ Low Switching Losses
□ Low Capacitance
□ Low Drive Requirement
□ Fast 50A Free Wheeling Schottky Diode
□ High Power Density
□ Isolated Baseplate
□ Aluminum Nitride Ceramic
Applications:
□ High Frequency Power Supply
□ High Efficiency Inverter
□ High Temperature Environment
QJD1210006产品属性
- 类型
描述
- 型号
QJD1210006
- 制造商
Powerex Power Semiconductors
- 功能描述
SILICON CARBIDE TRANSISTOR
- 制造商
Powerex Power Semiconductors
- 功能描述
SILICON CARBIDE POWER TRANSISTORS/MODULES
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Powerex Inc. |
25+ |
模块 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Powerex Inc. |
22+ |
Module |
9000 |
原厂渠道,现货配单 |
|||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271767邹小姐 |
|||
INTEL |
22+ |
NA |
2000 |
原装正品支持实单 |
|||
INTEL |
08+ |
BGA |
8 |
||||
INTEL |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
|||
INTEL/英特尔 |
BGA |
1000 |
只做原装,库存和价格请咨询为准 |
||||
INTEL |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INTEL/英特尔 |
23+ |
BGA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
英特尔 |
BGA |
19 |
原装正品仓库现货 可看货支持实单! |
QJD1210006 资料下载更多...
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- STPS20L60CG-TR
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Powerex Power Semiconductors
Powerex成立于1986年1月1日,是通用电气公司和西屋电气公司(Westinghouse Electric Corporation)功率半导体部门合并的结果。为了向未来发展,三菱电机在Powerex中建立了股权投资。 1994年,西屋将其股份出售给通用电气和三菱电机,目前两者平分Powerex的股份。公司总部位于宾夕法尼亚州Youngwood。 Powerex 是一家领先的高功率半导体解决方案供应商,致力于提供离散器件、模块及集成电路,服务于工业、可再生能源和电动汽车等多个领域。其产品线涵盖绝缘栅双极晶体管(IGBTs)、高压IGBT、整流器、晶闸管及定制功率模块等,为客户提供高效和可靠