Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts

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Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts

文件：905.84 Kbytes Page：7 Pages

包装：盒 描述：IGBT MODULE 1200V 100A 570W 分立半导体产品 晶体管 - IGBT - 模块

QID1210006,SiC Modules,100 Amperes, 1200 Volts,(SiC MOSFET Modules / Hybrid Si/SiC IGBT Modules),Main Applications - high efficiency inverters, high frequency power supplies, high temperature environments

Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts

文件：905.84 Kbytes Page：7 Pages

NS 35/15 PERF (18X5,2) 2000MM-VPE 10 - DIN rai perforated

DIN rail perforated, Pack of 10 (20 m), similar to EN 60715, material: Steel, galvanized, passivated with a thick layer, Standard profile, color: silver

Silicon Carbide MOSFET Module 100 Amperes/1200 Volts

Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky dio

Omnidirectional input device realizing a smooth operating feel

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