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QG802C

50 V ~ 1000 V 8.0 Amp Surface Mount Silicon General Purpose Rectifiers

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SECOS

喜可士

QG802C

General Rectifier

SECOS

喜可士

General Rectifier

SECOS

喜可士

8.0 Amp Surface Mount Silicon General Purpose Rectifiers

文件:248.6 Kbytes Page:2 Pages

SECOS

喜可士

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

MOTOROLA

摩托罗拉

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

MOTOROLA

摩托罗拉

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

MOSPEC

统懋

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

更新时间:2026-5-18 21:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SeCoS
20+
SMC(DO-214AB)
36800
原装优势主营型号-可开原型号增税票
SECOS
新年份
SMC(DO-214AB)
85000
原装正品大量现货,要多可发货,实单带接受价来谈!
SeCoS
19+
SMC(DO-21
200000
SeCoS
24+
85000
原装现货假一赔十
SECOS
2019+PB
SMC(DO-214AB)
85000
原装正品 可含税交易

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