低压N沟道增强型场效应管

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

20V N-Channel MOSFET

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NetShelter AV 24U 600mm Wide x 825mm Deep Enclosure with Sides and 10-32 Threaded Rails Black

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MonolithicICs

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High- performance 5.1ch electronic volume

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