eDP to LVDS bridge IC

eDP to LVDS bridge IC

封装/外壳：56-VFQFN 裸露焊盘 包装：管件 描述：IC INTFACE SPECIALIZED 56HVQFN 集成电路（IC） 专用

封装/外壳：56-VFQFN 裸露焊盘 包装：管件 描述：IC INTFACE SPECIALIZED 56HVQFN 集成电路（IC） 专用

eDP to LVDS bridge for industrial and embedded applications

eDP to LVDS bridge for industrial and embedded applications

eDP to LVDS bridge for industrial and embedded applications

eDP to LVDS bridge for industrial and embedded applications

eDP to LVDS bridge for industrial and embedded applications

eDP to LVDS bridge for industrial and embedded applications

eDP to LVDS bridge for industrial and embedded applications

eDP to LVDS bridge for industrial and embedded applications

60V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3460 is available in SOT-23S package. FEATURES  BV≥60V ID=3A RDS(ON) ≤90mΩ @ VGS=10V RDS(ON) ≤110mΩ @ VGS=5V  Advanced trench cell design  High speed switch  Available in SOT-23S Package APPLICATION  Portable appliances  Notebook/PC appliances  Power Manage

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) ● RDS(ON)

Heyco® Original Series-35 Liquid Tight Cordgrips

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N-Channel 60V (D-S) MOSFET

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