60VN-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM3460isavailableinSOT-23Spackage. FEATURES BV≥60VID=3A RDS(ON)≤90mΩ@VGS=10V RDS(ON)≤110mΩ@VGS=5V Advancedtrenchcelldesign Highspeedswitch AvailableinSOT-23SPackage APPLICATION Portableappliances Notebook/PCappliances PowerManage

60VN-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM3460isavailableinSOT-23Spackage. FEATURES BV≥60VID=3A RDS(ON)≤90mΩ@VGS=10V RDS(ON)≤110mΩ@VGS=5V Advancedtrenchcelldesign Highspeedswitch AvailableinSOT-23SPackage APPLICATION Portableappliances Notebook/PCappliances PowerManage

60VN-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM3460isavailableinSOT-23Spackage. FEATURES BV≥60VID=3A RDS(ON)≤90mΩ@VGS=10V RDS(ON)≤110mΩ@VGS=5V Advancedtrenchcelldesign Highspeedswitch AvailableinSOT-23SPackage APPLICATION Portableappliances Notebook/PCappliances PowerManage

N-Channel60V(D-S)MOSFET

文件：115.84 Kbytes Page：3 Pages

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3460/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas4.5V,inthesmallSOT-23footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlo

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.65A(VGS=10V) ●RDS(ON)

Heyco®OriginalSeries-35LiquidTightCordgrips

文件：264.32 Kbytes Page：1 Pages