N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) ● RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) ● RDS(ON)

60V N-Channel MOSFET

文件：168.92 Kbytes Page：4 Pages

N-Channel MOSFET

文件：1.66899 Mbytes Page：4 Pages

N-Channel MOSFET

文件：1.96583 Mbytes Page：4 Pages

60V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3460 is available in SOT-23S package. FEATURES  BV≥60V ID=3A RDS(ON) ≤90mΩ @ VGS=10V RDS(ON) ≤110mΩ @ VGS=5V  Advanced trench cell design  High speed switch  Available in SOT-23S Package APPLICATION  Portable appliances  Notebook/PC appliances  Power Manage

Heyco® Original Series-35 Liquid Tight Cordgrips

文件：264.32 Kbytes Page：1 Pages

N-Channel 60V (D-S) MOSFET

文件：115.84 Kbytes Page：3 Pages