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PTH12060Y价格
参考价格：￥98.8149
型号：PTH12060YAD 品牌：Emerson 备注：这里有PTH12060Y多少钱，2025年最近7天走势，今日出价，今日竞价，PTH12060Y批发/采购报价，PTH12060Y行情走势销售排行榜，PTH12060Y报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PTH12060Y | 10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 |   | |
PTH12060Y | 用于 DDR/QDR 存储器的 10A、12V 输入、总线终端电源模块 | TI 德州仪器 | | |
PTH12060Y | DC-DC CONVERTERS Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | ARTESYN | | |
PTH12060Y | Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | |
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O | TI 德州仪器 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
MEMORY BUS TERMINATION MODULES 文件：838 Kbytes Page：19 Pages | TI 德州仪器 | | ||
封装/外壳：10-DIP 模块 包装：管件 描述：DC DC CONVERTER 0.55-1.8V 电源 - 板安装 直流转换器 | TI2 德州仪器 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
MEMORY BUS TERMINATION MODULES 文件：838 Kbytes Page：19 Pages | TI 德州仪器 | | ||
封装/外壳：10-SMD 模块 包装：托盘 描述：DC DC CONVERTER 0.55-1.8V 电源 - 板安装 直流转换器 | TI2 德州仪器 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
MEMORY BUS TERMINATION MODULES 文件：838 Kbytes Page：19 Pages | TI 德州仪器 | | ||
Non-isolated DDR/QDR Memory Bus Termination Module 文件：232.07 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden | ADPOW | | ||
Nylon Snap Lock Pins 文件：147.6 Kbytes Page：1 Pages | Heyco | | ||
CONTINENTAL EUROPE CORD SET CEE 7/7 STRAIGHT TO IEC 60320 C19 文件：48.14 Kbytes Page：1 Pages | POWERDYNAMICS | | ||
POWER MOS V 文件：121.63 Kbytes Page：4 Pages | ADPOW | |
PTH12060Y产品属性
- 类型
描述
- 型号
PTH12060Y
- 制造商
EMERSON-NETWORKPOWER
- 制造商全称
Emerson Network Power
- 功能描述
Non-isolated DDR/QDR Memory Bus Termination Module
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
SMD-10P |
5239 |
百分百原装正品,可原型号开票 |
|||
TI |
24+ |
DIP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
TI(德州仪器) |
2024+ |
- |
500000 |
诚信服务,绝对原装原盘 |
|||
TI |
24+ |
Surface Mount Module|10 |
70230 |
免费送样原盒原包现货一手渠道联系 |
|||
TEXASINS |
23+ |
NA |
112 |
专做原装正品,假一罚百! |
|||
ARTESYN |
25+23+ |
NA |
36867 |
绝对原装正品全新进口深圳现货 |
|||
TI |
2010 |
18 |
公司优势库存 热卖中! |
||||
TI(德州仪器) |
24+ |
SMD-10P |
1083 |
特价优势库存质量保证稳定供货 |
|||
TI/德州仪器 |
24+ |
DIP |
5000 |
全新原装正品现货 假一赔十 |
|||
TI |
23+ |
NA |
20000 |
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PTH12060Y规格书下载地址
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DdatasheetPDF页码索引
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