10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES

FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O

MEMORY BUS TERMINATION MODULES

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Non-isolated DDR/QDR Memory Bus Termination Module

文件：232.07 Kbytes Page：4 Pages

封装/外壳：10-DIP 模块 包装：管件 描述：DC DC CONVERTER 0.55-1.8V 电源 - 板安装 直流转换器

10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES

FEATURES • VTT Bus Termination Output (Output Tracks the System VREF) • 10 A Output Current • 3.3-V, 5-V or 12-V Input Voltage • DDR and QDR Compatible • On/Off Inhibit (for VTT Standby) • Undervoltage Lockout • Operating Temperature: –40°C to 85°C • Efficiencies up to 91% • Output O

Non-isolated DDR/QDR Memory Bus Termination Module

文件：232.07 Kbytes Page：4 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

CONTINENTAL EUROPE CORD SET CEE 7/7 STRAIGHT TO IEC 60320 C19

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Nylon Snap Lock Pins

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POWER MOS V

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