CONTINENTAL EUROPE CORD SET CEE 7/7 STRAIGHT TO IEC 60320 C19

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Nylon Snap Lock Pins

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Cable glands / General Accessories

- Pressure compensation elements - Polyamide or brass cable glands - EMC and EX cable glands - Handles - DIN rail holders - Wall fittings - Enclosure holders - Enclosure feet - Battery compartments - Fixing material

Cable glands / General Accessories

- Pressure compensation elements - Polyamide or brass cable glands - EMC and EX cable glands - Handles - DIN rail holders - Wall fittings - Enclosure holders - Enclosure feet - Battery compartments - Fixing material

Cable glands / General Accessories

- Pressure compensation elements - Polyamide or brass cable glands - EMC and EX cable glands - Handles - DIN rail holders - Wall fittings - Enclosure holders - Enclosure feet - Battery compartments - Fixing material

ESD Protection Arrays, Chip Scale Package

Product Description The CM1206 family of transient voltage suppressor arrays provides a very high level of protection for sensitive electronic components that may be subjected to ESD. The back-to-back Zener connections provide ESD protection in cases where nodes with AC signals are present. Feat

包装：散装 描述：B401 5X7 BLK,RED/WHT EYE PPE SIG 标签，标志，护栏，标识 标志，铭牌，招贴

包装：散装 描述：B401 5X7 BLK,RED/WHT EYE PPE SIG 标签，标志，护栏，标识 标志，铭牌，招贴

KAMES 2

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KAMES 2/3 EKL

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Crimping pliers - CRIMPFOX HCM 50 OHM

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RECEPTACLE ASSY, 1.0mm FH CONNECTOR (IEEE1386)

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RECEPTACLE ASSY, 1.0mm FH CONNECTOR (IEEE1386)

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自由高度插座连接器：板对板，垂直，84，1mm

插拔式接线端子

ZAP TUBE - 备用部件

Accessories for tools/automatic devices - ZAP TUBE

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MULTIPLE LIGHT BEAM SAFETY DEVICES

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

POWER MOS V

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