CONTINENTAL EUROPE CORD SET CEE 7/7 STRAIGHT TO IEC 60320 C19

文件：48.14 Kbytes Page：1 Pages

Nylon Snap Lock Pins

文件：147.6 Kbytes Page：1 Pages

Cable glands / General Accessories

- Pressure compensation elements - Polyamide or brass cable glands - EMC and EX cable glands - Handles - DIN rail holders - Wall fittings - Enclosure holders - Enclosure feet - Battery compartments - Fixing material

Cable glands / General Accessories

- Pressure compensation elements - Polyamide or brass cable glands - EMC and EX cable glands - Handles - DIN rail holders - Wall fittings - Enclosure holders - Enclosure feet - Battery compartments - Fixing material

Cable glands / General Accessories

- Pressure compensation elements - Polyamide or brass cable glands - EMC and EX cable glands - Handles - DIN rail holders - Wall fittings - Enclosure holders - Enclosure feet - Battery compartments - Fixing material

ESD Protection Arrays, Chip Scale Package

Product Description The CM1206 family of transient voltage suppressor arrays provides a very high level of protection for sensitive electronic components that may be subjected to ESD. The back-to-back Zener connections provide ESD protection in cases where nodes with AC signals are present. Feat

包装：散装 描述：B401 5X7 BLK,RED/WHT EYE PPE SIG 标签，标志，护栏，标识 标志，铭牌，招贴

包装：散装 描述：B401 5X7 BLK,RED/WHT EYE PPE SIG 标签，标志，护栏，标识 标志，铭牌，招贴

KAMES 2

文件：89.83 Kbytes Page：3 Pages

KAMES 2/3 EKL

文件：93.33 Kbytes Page：3 Pages

Crimping pliers - CRIMPFOX HCM 50 OHM

文件：50.29 Kbytes Page：2 Pages

RECEPTACLE ASSY, 1.0mm FH CONNECTOR (IEEE1386)

文件：325.47 Kbytes Page：1 Pages

自由高度插座连接器：板对板，垂直，64，1mm

RECEPTACLE ASSY, 1.0mm FH CONNECTOR (IEEE1386)

文件：325.47 Kbytes Page：1 Pages

自由高度插座连接器：板对板，垂直，84，1mm

插拔式接线端子

Accessories for tools/automatic devices - ZAP TUBE

文件：40.83 Kbytes Page：2 Pages

MULTIPLE LIGHT BEAM SAFETY DEVICES

文件：1.18152 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

POWER MOS V

文件：121.63 Kbytes Page：4 Pages