High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET300 W, 2110 – 2170 MHz

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

封装/外壳：H-37275-6/2 包装：卷带（TR） 描述：IC AMP RF LDMOS H-37275-6 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

封装/外壳：H-37275-6/2 包装：卷带（TR） 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages