High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 300 W, 30 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Enhanced for use in DPD error correction systems\n ·Wide video bandwidth\n ·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, - POUT = 49.5 dBm Avg - Gain = 17.5 dB - Efficiency = 30%\n ·Increased negative gate-source voltage range for improved perfo;

High Power RF LDMOS FET300 W, 2110 – 2170 MHz

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. • Broadband internal matching\n• Enhanced for use in DPD error correction systems\n• Wide video bandwidth\n• Typical single-carrier WCDMA performance at 2170 MHz, 30 V\n• POUT = 49.5 dBm Avg\n• Gain = 17.5 dB\n• Efficiency = 30%\n• Increased negative gate-source voltage range for improved perfor;

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

封装/外壳：H-37275-6/2 包装：卷带（TR） 描述：IC AMP RF LDMOS H-37275-6 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

封装/外壳：H-37275-6/2 包装：卷带（TR） 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages