Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 300 W, 30 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Enhanced for use in DPD error correction systems\n ·Wide video bandwidth\n ·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, - POUT = 49.5 dBm Avg - Gain = 17.5 dB - Efficiency = 30%\n ·Increased negative gate-source voltage range for improved perfo;

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes Page：16 Pages