High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package. Features • Typical two-carrier

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes Page：18 Pages

High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes Page：18 Pages

General Purpose Transistors (700 MHz to 2700 MHz)

封装/外壳：10-LDFN 裸露焊盘 包装：散装 描述：FET RF LDMOS 4W SON10 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes Page：18 Pages

包装：散装 描述：RF MOSFET TRANSISTORS 分立半导体产品 晶体管 - FET，MOSFET - 射频

FET RF LDMOS 8W SON10

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes Page：18 Pages