位置:PTFA220041M > PTFA220041M详情

PTFA220041M中文资料

厂家型号

PTFA220041M

文件大小

1277.16Kbytes

页面数量

18

功能描述

High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

INFINEON

PTFA220041M数据手册规格书PDF详情

Description

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package.

Features

• Typical two-carrier WCDMA performance,

1842 MHz, 8 dB PAR

- POUT = 27 dBm Avg

- ACPR = –44 dBc

• Typical CW performance, 1842 MHz, 28 V

- POUT = 37 dBm

- Efficiency = 53.5

- Gain = 17.9 dB

• Typical CW performance, 940 MHz, 28 V

- POUT = 37.5 dBm

- Efficiency = 57

- Gain = 19.7 dB

• Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)

output power

• Integrated ESD protection

• Excellent thermal stability

• Pb-free and RoHS compliant

PTFA220041M产品属性

  • 类型

    描述

  • 型号

    PTFA220041M

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

更新时间:2025-10-10 16:10:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON
24+
SON10
2130
进口原装现货/假一罚十
INFINEON/英飞凌
2021+
QFN
9000
原装现货,随时欢迎询价
INFINEON
2023+
5800
进口原装,现货热卖
INFINEON/英飞凌
2223+
PG-SON-10
26800
只做原装正品假一赔十为客户做到零风险
INFINEON
17+
QFN
6200
100%原装正品现货
INFINEON/英飞凌
23+
QFN
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
INFINEON/英飞凌
2023+
PG-SON-10
6895
原厂全新正品旗舰店优势现货
INFINEON
2016+
PG-SON-10
3900
只做原装,假一罚十,公司可开17%增值税发票!
INFINEON
24+
SON10
90000
一级代理商进口原装现货、价格合理
INFINEON
24+
QFN
20000
全新原厂原装,进口正品现货,正规渠道可含税!!