LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

Telecom Splicing Connectors and Pliers

DESCRIPTION Connector Pressing Telcom Pliers

Inductors Military, MIL-PRF-15305 Qualified, Type LT, Molded

FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, sturdy construction • Epoxy molded construction provides superior moisture protection

isc N-Channel MOSFET Transistor

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