型号 功能描述 生产厂家 企业 LOGO 操作
PTF181301A

LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

Infineon

英飞凌

PTF181301A产品属性

  • 类型

    描述

  • 型号

    PTF181301A

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

更新时间:2025-12-27 14:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
24+
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
ERICSSON/爱立信
23+
TO-59
8510
原装正品代理渠道价格优势
ERICSSON/爱立信
24+
500
现货供应
INFINEON
24+
NA
1500
INFINEON/英飞凌
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
INFINEON
23+
NA
8000
只做原装现货
INFINEON
23+
高频管
350
专营高频管模块,全新原装!
INFINEON
05/06+
369
全新原装100真实现货供应
INFINEON
24+
NA
5000
只做原装公司现货
INFINEON
24+
NA
36520
一级代理/放心采购

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