位置：首页 > IC中文资料第6317页 > PTF181301
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PTF181301 | LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o | Infineon 英飞凌 |   | |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o | Infineon 英飞凌 | |
PTF181301产品属性
- 类型
描述
- 型号
PTF181301
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
高频管 |
350 |
专营高频管模块,全新原装! |
|||
INFINEON |
25+ |
高频管 |
4500 |
原装正品!公司现货!欢迎来电! |
|||
INFINEON |
05/06+ |
369 |
全新原装100真实现货供应 |
||||
INFINEON/英飞凌 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ERICSSON/爱立信 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
ERICSSON/爱立信 |
24+ |
500 |
现货供应 |
||||
INFINEON |
24+ |
NA |
1500 |
||||
INFINEON |
23+ |
8000 |
只做原装现货 |
||||
INFINEON |
23+ |
7000 |
|||||
INFINEON |
24+ |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
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PTF181301规格书下载地址
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2019-10-29
DdatasheetPDF页码索引
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