6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50 efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 1.5 GHz, 28 Volts

60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime

12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. •

6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

60 Watts, 1.8?.0 GHz GOLDMOS Field Effect Transistor

12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor

3-CHANNEL PC POWER SUPPLY SUPERVISOR FOR 3.3V, 5V AND 12V

文件：84.97 Kbytes Page：7 Pages

17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter

文件：607.19 Kbytes Page：26 Pages

17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter

文件：607.19 Kbytes Page：26 Pages

17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter

文件：607.19 Kbytes Page：26 Pages

Sampling A/D Converters

文件：123.84 Kbytes Page：1 Pages