12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. •

12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor

Description\nThe PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability.• INTERNALLY

4-Wide 4-3-3-3-Input OR-AND Gate

DESCRIPTION The 10119 is a 4-wide 4-3-3-3-Input OR-AND Gate designed for use in data control as a general purpose logic element. All unused inputs can be left open due to integrated pull-down resistors, which avoid the need for a supply voltage. FEATURES • Typical propagation delay: 2.3ns • Ty

4-Wide 4-3-3-3-Input OR-AND Gate

DESCRIPTION The 10119 is a 4-wide 4-3-3-3-Input OR-AND Gate designed for use in data control as a general purpose logic element. All unused inputs can be left open due to integrated pull-down resistors, which avoid the need for a supply voltage. FEATURES • Typical propagation delay: 2.3ns • Ty

4-Wide 4-3-3-3-Input OR-AND Gate

DESCRIPTION The 10119 is a 4-wide 4-3-3-3-Input OR-AND Gate designed for use in data control as a general purpose logic element. All unused inputs can be left open due to integrated pull-down resistors, which avoid the need for a supply voltage. FEATURES • Typical propagation delay: 2.3ns • Ty

SMT POWER INDUCTORS

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