60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime

60 Watts, 1.8?.0 GHz GOLDMOS Field Effect Transistor

THE SLIM POWER RELAY

FEATURES • Slim size 28 mm (L)×5 mm (W)×15 mm (H) 1.102 inch (L)×.197 inch (W)×.591 inch (H) permits high density mounting • Wide switching capacity: 100 mA/12 V DC-6A/250 V AC • High sensitivity: 170mW • High breakdown (4,000 V) and surge (6,000 V) voltage between contacts and

ZINC OXIDE VARISTOR 50 SERIES

TVM0A270K SMD 0402 SIZE TVM1A080M SMD 0603 SIZE TVM2A080M SMD 0805 SIZE TVM3A080M SMD 1206 SIZE TVM4A080M SMD 1210 SIZE TVR05180 5 PIE VARISTOR TVR07180 7 PIE VARISTOR TVR10180 10 PIE VARISTOR TVR14180 14 PIE VARISTOR TVR20180 20 PIE VARISTOR TVR25

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DIODE MODULE 100A/1200V/1600V

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