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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN microwave power transistors DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinametalceramicSOT440Aflangepackagewithbaseconnectedtotheflange. FEATURES •DiffusedemitterballastingresistorsprovidingexcellentcurrentsharingandwithstandingahighVSWR •Interdigitatedstructureprovides | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIPTB32001XisDesignedforCommonBaseGeneralpurposeamplifierApplicationsupto4.2GHz. FEATURESINCLUDE: •DiffusedEmitterBallastingResistor •HermeticFlangePackage •GoldMetelization | ASI Advanced Semiconductor |  | | |
NPN microwave power transistors DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinametalceramicSOT440Aflangepackagewithbaseconnectedtotheflange. FEATURES •DiffusedemitterballastingresistorsprovidingexcellentcurrentsharingandwithstandingahighVSWR •Interdigitatedstructureprovides | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
NPN microwave power transistors DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinametalceramicSOT440Aflangepackagewithbaseconnectedtotheflange. FEATURES •DiffusedemitterballastingresistorsprovidingexcellentcurrentsharingandwithstandingahighVSWR •Interdigitatedstructureprovides | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIPTB32005XisDesignedforCommonBaseGeneralpurposeamplifierApplicationsupto4.2GHz. FEATURESINCLUDE: •DiffusedEmitterBallastingResistor •HermeticFlangePackage •GoldMetelization | ASI Advanced Semiconductor | | | |
BAROCAP Digital Barometer PTB330 Features VaisalaBAROCAPsensor Accuratemeasurement Excellentlong-termstability Addedreliabilitythrough redundancy Graphicaltrenddisplaywith1- yearhistorydata Heightandaltitudecorrected pressure(QFE,QNH) Foraviation,professional meteorology,laboratories,and demandin | VAISALAVaisala 维萨拉维萨拉（北京）测量技术有限公司 |  | | |
包装：散装 描述：120 TO 277 VAC, 90% EFFICIENCY, 电源 - 外部/内部（板外） LED 驱动器 | ETC 知名厂家 | ETC | | |
包装：盒 描述：120 \u0026 277 VAC, 90% EFFICIENCY, R 电源 - 外部/内部（板外） LED 驱动器 | ETC 知名厂家 | ETC | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.56 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
3A 100V HPTR짰 Schottky Rectifier 文件：560.05 Kbytes Page：5 Pages | PFC PFC Device Inc. |  | | |
3A 100V HPTR짰 Schottky Rectifier 文件：564.54 Kbytes Page：5 Pages | PFC PFC Device Inc. | | |
PTB3产品属性
- 类型
描述
- 型号
PTB3
- 制造商
ASI
- 制造商全称
ASI
- 功能描述
NPN SILICON RF POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEOPHOTOI |
24+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
PHOTON |
23+ |
DIP |
89630 |
当天发货全新原装现货 |
|||
ERICSSON/爱立信 |
24+ |
299 |
现货供应 |
||||
NEOPHOTOI |
1836+ |
9852 |
只做原装正品现货!或订货假一赔十! |
||||
N/A |
24+ |
04NOPB |
3000 |
全新原装现货 优势库存 |
|||
Infineon |
24+ |
SOP |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
TI/TEXAS |
23+ |
DIPMODULE-10 |
8931 |
||||
HEPHOTONICS |
22+ |
HEPHOTONICS |
12245 |
现货,原厂原装假一罚十! |
|||
NEPHOTO |
25+23+ |
DIP |
35268 |
绝对原装正品全新进口深圳现货 |
|||
HEPHOTONICS |
23+ |
HEPHOTONICS |
6000 |
专业配单保证原装正品假一罚十 |
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PTB3规格书下载地址
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2019-10-29
DdatasheetPDF页码索引
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