DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.

FEATURES

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Interdigitated structure provides high emitter efficiency

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.

APPLICATIONS

Common-base, class B power amplifiers up to 4.2 GHz.