N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

description 118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits • Avalanche rated,

N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

description 118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits • Avalanche rated,

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • A

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • A

N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78

1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for dem

N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction los

N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK

1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction los

N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220

1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction lo

NextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET in LFPAK56 package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 160 A ID [max] – demonstrated continuous current rating • Low QG

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET

N-channel LFPAK 40 V 3.3 m廓 standard level MOSFET

N-channel 60 V, 3.4 m廓 logic level MOSFET in SOT78

isc N-Channel MOSFET Transistor

文件：305.53 Kbytes Page：2 Pages

N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78

isc N-Channel MOSFET Transistor

文件：299.52 Kbytes Page：2 Pages

N-channel 80 V, 3.5 m standard level MOSFET in D2PAK

文件：227.73 Kbytes Page：14 Pages

N-channel 80 V, 3.5 m standard level MOSFET in D2PAK

文件：227.73 Kbytes Page：14 Pages

N-channel 80 V, 3.3 m廓 standard level MOSFET in I2PAK

文件：193.66 Kbytes Page：14 Pages

isc N-Channel MOSFET Transistor

文件：299.37 Kbytes Page：2 Pages

N-channel 80 V, 3.3 m standard level MOSFET in I2PAK

文件：193.66 Kbytes Page：14 Pages

N-channel 80 V, 3.3 m廓 standard level MOSFET in TO-220

文件：200.71 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

文件：305.35 Kbytes Page：2 Pages

N-channel 80 V, 3.3 m standard level MOSFET in TO-220

文件：200.71 Kbytes Page：15 Pages

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

文件：171.04 Kbytes Page：2 Pages

8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

文件：171.04 Kbytes Page：2 Pages

8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

文件：171.04 Kbytes Page：2 Pages