N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

description 118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits • Avalanche rated,

N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

description 118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits • Avalanche rated,

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • A

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • A

Common mode chokes with Ferrite cores

文件：378.07 Kbytes Page：5 Pages