N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Features ■ TrenchMOS™ technology ■ Very low on-state resistance ■ Fast Switching ■ Low thermal resistance Applications ■ DC to DC converters ■ Switched mode power supplies

N-Channel 150 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Features ■ TrenchMOS™ technology ■ Very low on-state resistance ■ Fast Switching ■ Low thermal resistance Applications ■ DC to DC converters ■ Switched mode power supplies

N-channel TrenchMOS transistor

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