PSMN063-150D价格
参考价格：￥3.3989
型号：PSMN063-150D,118 品牌：NXP 备注：这里有PSMN063-150D多少钱，2026年最近7天走势，今日出价，今日竞价，PSMN063-150D批发/采购报价，PSMN063-150D行情走势销售排行榜，PSMN063-150D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PSMN063-150D | N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC |   |
PSMN063-150D | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 29A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PSMN063-150D | N-Channel 150 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch | VBSEMI 微碧半导体 | | |
PSMN063-150D | N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | |
PSMN063-150D | PSMN063-150D - N-channel TrenchMOS SiliconMAX standard level FET N-channel TrenchMOS SiliconMAX standard level FET - SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on ·Higher operating power due to low thermal resistance\n·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics; | NEXPERIA 安世 | | |
PSMN063-150D | N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Features ■ TrenchMOS™ technology ■ Very low on-state resistance ■ Fast Switching ■ Low thermal resistance Applications ■ DC to DC converters ■ Switched mode power supplies | PHILIPS 飞利浦 | | |
PSMN063-150D | N-channel TrenchMOS transistor 文件：95.92 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | |
N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Features ■ TrenchMOS™ technology ■ Very low on-state resistance ■ Fast Switching ■ Low thermal resistance Applications ■ DC to DC converters ■ Switched mode power supplies | PHILIPS 飞利浦 | |
PSMN063-150D产品属性
- 类型
描述
- Package name：
DPAK
- Product status：
Production
- Channel type：
N
- Number of transistors：
1
- V_DS [max] (V)：
150
- R_DSon [max] @ V_GS = 10 V (mΩ)：
63
- T_j [max] (°C)：
175
- I_D [max] (A)：
29
- Q_GD [typ] (nC)：
20
- Q_G(tot) [typ] @ V_GS = 10 V (nC)：
55
- P_tot [max] (W)：
150
- Q_r [typ] (nC)：
550
- V_GSth [typ] (V)：
3
- Automotive qualified：
N
- C_iss [typ] (pF)：
2390
- C_oss [typ] (pF)：
240
- Date：
2010-11-13
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia |
25+ |
DPAK |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
恩XP |
24+ |
标准封装 |
10368 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
24+ |
SOT252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
25+23+ |
TO-252 |
36977 |
绝对原装正品全新进口深圳现货 |
|||
PHI |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
PHI |
2402+ |
SOT-252 |
8324 |
原装正品!实单价优! |
|||
恩XP |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
PH |
24+ |
SOT428TO-252 |
8866 |
||||
恩XP |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
原装 |
最新 |
NA |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
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PSMN063-150D规格书下载地址
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DdatasheetPDF页码索引
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