N-channel logic level TrenchMOS(TM) transistor

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N-channel logic level TrenchMOS(TM) transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel logic level TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Logic level compatible Applications:-

TrenchMOS logic level FET

Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ Computer mothe

N-channel TrenchMOS SiliconMAX logic level FET

N-channel TrenchMOS SiliconMAX logic level FET

1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and bene

N-channel logic level TrenchMOS(TM) transistor

FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications

N-channel logic level TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel logic level TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

N-channel logic level TrenchMOS(TM) transistor

FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

N-channel logic level TrenchMOS transistor

文件：142.25 Kbytes Page：9 Pages

PSMN005-30K - N-channel TrenchMOS SiliconMAX logic level FET

N-channel TrenchMOS SiliconMAX logic level FET

N-channel logic level TrenchMOS transistor

文件：113.53 Kbytes Page：9 Pages

N-channel logic level TrenchMOS(TM) transistor

文件：117.06 Kbytes Page：12 Pages

N-channel logic level TrenchMOS(TM) transistor

文件：117.06 Kbytes Page：12 Pages

N-channel logic level TrenchMOS transistor

文件：113.53 Kbytes Page：9 Pages

WEAR RINGS

DESCRIPTION The BECA 005 profile is a machined guide ring with a 30° angle cut as standard in a tubular material composed of a cotton weave with a superfine mesh, imbibed with phenolic resin with added lubricant. Other types of cuts can be made. APPLICATIONS Hydraulic cylinders Hydra

WEAR RINGS

DESCRIPTION The BECA 005 profile is a machined guide ring with a 30° angle cut as standard in a tubular material composed of a cotton weave with a superfine mesh, imbibed with phenolic resin with added lubricant. Other types of cuts can be made. APPLICATIONS Hydraulic cylinders Hydra

1A MINIATURE GENERAL PURPOSE PLASTIC RECTIFIER

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Super Fast-Acting Fuse

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Fast-Acting Fuse

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