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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PSMN005-75P | N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications. | PHILIPS 飞利浦 |   | |
PSMN005-75P | N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN005-75P | N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | |
PSMN005-75P | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PSMN005-75P | N-channel TrenchMOS SiliconMAX standard level FET | NEXPERIA 安世 | | |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications. | PHILIPS 飞利浦 | | ||
N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN005-75P产品属性
- 类型
描述
- 型号
PSMN005-75P
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
2026+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
Nexperia |
25+ |
SOT-78 |
11580 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
恩XP |
24+ |
TO-220AB |
3000 |
全新原装环保现货 |
|||
恩XP |
26+ |
VQFN-32 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
恩XP |
2025+ |
TO220 |
3685 |
全新原厂原装产品、公司现货销售 |
|||
恩XP |
24+ |
TO-220 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
恩XP |
22+ |
TO-220 |
8200 |
全新进口原装现货 |
|||
PHI |
1019 |
TO-220 |
444 |
||||
恩XP |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
|||
恩XP |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
PSMN005-75P芯片相关品牌
PSMN005-75P规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式全套配单服务 0755-23140719/15323480719(微信同号）李s
2019-2-19
DdatasheetPDF页码索引
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