位置：首页 > IC中文资料第3372页 > PSMN005-75P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PSMN005-75P | N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications. | Philips 飞利浦 |   | |
PSMN005-75P | N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN005-75P | N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
PSMN005-75P | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PSMN005-75P | N-channel TrenchMOS SiliconMAX standard level FET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications. | Philips 飞利浦 | | ||
N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN005-75P产品属性
- 类型
描述
- 型号
PSMN005-75P
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
恩XP |
24+ |
TO220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
恩XP |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
|||
NEXPERIA/安世 |
25+ |
原装 |
600000 |
NEXPERIA/安世全新特价PSMN005-75P,127即刻询购立享优惠#长期有排单订 |
|||
恩XP |
09+ |
TO-220 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
恩XP |
24+ |
TO-220AB |
3000 |
全新原装环保现货 |
|||
恩XP |
24+ |
TO-220 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
Nexperia(安世) |
24+ |
SOT-78 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
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PSMN005-75P规格书下载地址
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2019-2-19
DdatasheetPDF页码索引
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