型号 功能描述 生产厂家 企业 LOGO 操作
PSMN005-75P

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

Philips

飞利浦

PSMN005-75P

N-channel TrenchMOS SiliconMAX standard level FET

ETC

知名厂家

PSMN005-75P

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

NEXPERIA

安世

PSMN005-75P

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PSMN005-75P

N-channel TrenchMOS SiliconMAX standard level FET

NEXPERIA

安世

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

Philips

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

ETC

知名厂家

PSMN005-75P产品属性

  • 类型

    描述

  • 型号

    PSMN005-75P

  • 功能描述

    MOSFET RAIL PWR-MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-20 18:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEXPERIA/安世
25+
原装
600000
NEXPERIA/安世全新特价PSMN005-75P,127即刻询购立享优惠#长期有排单订
恩XP
24+
TO220
5000
全新原装正品,现货销售
恩XP
原厂封装
9800
原装进口公司现货假一赔百
恩XP
23+
TO-220
8999999
原厂授权一级代理,专业海外优势订货,价格优势、品种
NEXPERIA/安世
25+
NA
860000
明嘉莱只做原装正品现货
恩XP
25+
SOT78
188600
全新原厂原装正品现货 欢迎咨询
恩XP
24+
TO-220
10000
只做原装欢迎含税交易,假一赔十,放心购买
Nexperia(安世)
24+
SOT-78
8498
支持大陆交货,美金交易。原装现货库存。
恩XP
22+
TO-220
8200
全新进口原装现货
恩XP
17+
TO-220
6200
100%原装正品现货

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