型号 功能描述 生产厂家 企业 LOGO 操作
PSMN005-55P

N-channel logic level TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

Philips

飞利浦

PSMN005-55P

N-channel logic level TrenchMOS(TM) transistor

FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSMN005-55P

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PSMN005-55P

N-channel logic level TrenchMOS(TM) transistor

文件:117.06 Kbytes Page:12 Pages

Philips

飞利浦

PSMN005-55P

N-channel logic level TrenchMOS transistor

文件:113.53 Kbytes Page:9 Pages

Philips

飞利浦

N-channel logic level TrenchMOS(TM) transistor

FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel logic level TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

Philips

飞利浦

N-channel logic level TrenchMOS(TM) transistor

文件:117.06 Kbytes Page:12 Pages

Philips

飞利浦

N-channel logic level TrenchMOS transistor

文件:113.53 Kbytes Page:9 Pages

Philips

飞利浦

PSMN005-55P产品属性

  • 类型

    描述

  • 型号

    PSMN005-55P

  • 功能描述

    MOSFET RAIL PWR-MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-26 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
NA/
226
优势代理渠道,原装正品,可全系列订货开增值税票
恩XP
22+
SOT-263
100000
代理渠道/只做原装/可含税
恩XP
25+
TO-220
32360
NXP/恩智浦全新特价PSMN005-55P即刻询购立享优惠#长期有货
PHI
23+
1498
专做原装正品,假一罚百!
恩XP
23+
TO-263
30000
全新原装现货,价格优势
PSMN005-55P
1464
1464
恩XP
24+
30000
房间原装现货特价热卖,有单详谈
PH
24+
SOT78TO-220AB
8866
恩XP
23+
SOT-263
8999999
原厂授权一级代理,专业海外优势订货,价格优势、品种
恩XP
23+
TO-220
50000
全新原装正品现货,支持订货

PSMN005-55P数据表相关新闻