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型号 功能描述 生产厂家 企业 LOGO 操作
PS158

PLASTIC SILICON RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 1.5 Amperes)

PLASTIC SILICON RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low

PANJIT

強茂

PS158

PLASTIC SILICON RECTIFIER

文件:72.12 Kbytes Page:2 Pages

PANJIT

強茂

PS158

PLASTIC SILICON RECTIFIER

文件:60.72 Kbytes Page:2 Pages

PANJIT

強茂

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 1.5 Amperes)

FAST SWITCHING PLASTIC RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT - 1.5 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Excee

PANJIT

強茂

低压降肖特基二极管

ASEMI

强元芯电子

FAST SWITCHING PLASTIC RECTIFIER

文件:49.37 Kbytes Page:2 Pages

PANJIT

強茂

FAST SWITCHING PLASTIC RECTIFIER

文件:50.37 Kbytes Page:2 Pages

PANJIT

強茂

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

MOTOROLA

摩托罗拉

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

NEC

瑞萨

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

NEC

瑞萨

Low Power Dual Operational Amplifiers

文件:1.0094 Mbytes Page:25 Pages

NSC

国半

PS158产品属性

  • 类型

    描述

  • 型号

    PS158

  • 制造商

    PANJIT

  • 制造商全称

    Pan Jit International Inc.

  • 功能描述

    PLASTIC SILICON RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 1.5 Amperes)

更新时间:2026-5-20 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/DIODES/PANJIT
24+
DO-15
43000

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