N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

N-Channel Power MOSFET

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N-CHANNEL MOSFET in a TO-220 Plastic Package

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N-CHANNEL MOSFET in a TO-263 Plastic Package

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OptiMOS?? Power-Transistor

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