封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS PNP 60V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Features •These are Pb-Free Devices*

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：卷带（TR）剪切带（CT） 描述：TRANS PNP 60V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

General Purpose Transistor

Features - AEC-Q101 Qualified. - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1. - High conductance.

808 MHz Center Frequency

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