位置：首页 > IC中文资料第5134页 > PMDPB85UPE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PMDPB85UPE | 20 V dual P-channel Trench MOSFET 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switchi | NEXPERIA 安世 |   | |
PMDPB85UPE | 20 V dual P-channel Trench MOSFET | ETC 知名厂家 | ETC | |
PMDPB85UPE | 20 V dual P-channel Trench MOSFET | NEXPERIA 安世 | | |
20 V dual P-channel Trench MOSFET 文件：879.71 Kbytes Page：15 Pages | Philips 飞利浦 | |
PMDPB85UPE产品属性
- 类型
描述
- 型号
PMDPB85UPE
- 制造商
NXP Semiconductors
- 功能描述
MOSFET DUAL P-CH 20V DFN2020
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, DUAL P-CH, 20V, DFN2020
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, DUAL P-CH, 20V, DFN2020, Transistor
- Polarity
Dual P Channel, Continuous Drain Current
- Id
-3.7A, Drain Source Voltage
- Vds
-20V, On Resistance
- Rds(on)
0.082ohm, Rds(on) Test Voltage
- Vgs
-4.5V, Threshold Voltage
- Vgs
-700mV, , RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
DFN-6(2x2) |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NEXPERIA/安世 |
2447 |
SOT1118 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
恩XP |
23+ |
DFN20206 |
8000 |
只做原装现货 |
|||
恩XP |
23+ |
DFN20206 |
7000 |
||||
NEXPERIA |
24+ |
DFN6 |
5000 |
全新原装正品,现货销售 |
|||
NEXPERIA |
24+ |
DFN6 |
8000 |
新到现货，只做全新原装正品 |
|||
NEXPERIA |
24+ |
DFN6 |
12000 |
原装正品 假一罚十 可拆样 |
|||
NEXPERIA/安世 |
25+ |
SOT1118 |
600000 |
NEXPERIA/安世全新特价PMDPB85UPE即刻询购立享优惠#长期有排单订 |
|||
NK/南科功率 |
2025+ |
DFN2020-6 |
3000 |
国产南科平替供应大量 |
|||
NEXPERIA |
2023+ |
DFN6 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
PMDPB85UPE规格书下载地址
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