1.1 General description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a

leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

package using Trench MOSFET technology.

1.2 Features and benefits

 Low threshold voltage

 Very fast switching

 Trench MOSFET technology

 2 kV ElectroStatic Discharge (ESD)

protection

1.3 Applications

 Relay driver

 High-speed line driver

 High-side load switch

 Switching circuits