丝印代码：X110；40 V, 200 mA NPN switching transistor

1. General description NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Suitable

40 V, 200 mA NPN switching transistor

40 V, 200 mA NPN switching transistor

1. General description NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Suitable

封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR） 描述：PMBT3904QA/SOT1215/DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

NPN switching transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: MPS3906. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification.

General Purpose Transistor

General Purpose Transistor NPN Silicon

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching.