60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

60V N-Channel Power Mosfet

Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test

60V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit

N-Channel MOSFET uses advanced trench technology

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60V N-Channel Trench MOSFET

文件：812.36 Kbytes Page：8 Pages

N-Channel 60-V (D-S) MOSFET

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