位置：首页 > IC中文资料 > PJM03N60SQ
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PJM03N60SQ | N- Enhancement Mode Field Effect Transistor 文件：2.12693 Mbytes Page：6 Pages | PJSEMI 平晶半导体 |   | |
PJM03N60SQ | N-Channel Enhancement Mode Power MOSFET | pingjingsemi 平晶微 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：2.52205 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.72801 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
Power MOSFET 文件：193.74 Kbytes Page：3 Pages | JIANGSU 长电科技 | | ||
N-CHANNEL SILICON POWER MOSFETFeatures 文件：580.87 Kbytes Page：5 Pages | Fuji 富士通 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
SOT-89 |
986966 |
国产 |
|||
PANJIT/强茂 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
24+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
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PJM03N60SQ数据表相关新闻
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深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
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DdatasheetPDF页码索引
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